MFMIS Negative Capacitance FinFET Design for Improving Drive Current
نویسندگان
چکیده
منابع مشابه
Improvement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations
Abstract: We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to improve the drive current of the 5nm FinFET. The improvement of drivecurrent is one of the most important issues in ...
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J. Shulman,1,2,* Y. Y. Xue,1,2 S. Tsui,1,2,3 F. Chen,1,2 and C. W. Chu1,2,4,5 1Department of Physics, University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002, USA 2Texas Center for Superconductivity, University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002, USA 3Department of Physics, California State University–San Marcos, 333 S. Twin Oaks Valley Road, ...
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ژورنال
عنوان ژورنال: Electronics
سال: 2020
ISSN: 2079-9292
DOI: 10.3390/electronics9091423